Effect of Ce/(Hf + Ce) ratio on ferroelectric and piezoelectric properties and effect of film thickness on ferroelectricity for thick CeO2–HfO2 films deposited by sputtering method without substrate heating

Yu-Ta Chen; Kazuki Okamoto; Nana Sun; Yuxian Hu; Nachi Chaya; Kohei Shimonosono; Miki Nakahata; Hiroyuki Ono; Wakiko Yamaoka; Yukari Inoue; Hiroshi Funakubo

doi:10.2109/jcersj2.25009

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Effect of Ce/(Hf + Ce) ratio on ferroelectric and piezoelectric properties and effect of film thickness on ferroelectricity for thick CeO₂–HfO₂ films deposited by sputtering method without substrate heating

Yu-Ta Chen, Kazuki Okamoto, Nana Sun, Yuxian Hu, Nachi Chaya, Kohei Shimonosono, Miki Nakahata, Hiroyuki Ono, Wakiko Yamaoka, Yukari Inoue, Hiroshi Funakubo

著者情報

Yu-Ta Chen
School of Materials and Chemical Technology, Department of Materials Science and Engineering, Institute of Science Tokyo
Kazuki Okamoto
School of Materials and Chemical Technology, Department of Materials Science and Engineering, Institute of Science Tokyo
Nana Sun
School of Materials and Chemical Technology, Department of Materials Science and Engineering, Institute of Science Tokyo
Yuxian Hu
School of Materials and Chemical Technology, Department of Materials Science and Engineering, Institute of Science Tokyo
Nachi Chaya
School of Materials and Chemical Technology, Department of Materials Science and Engineering, Institute of Science Tokyo
Kohei Shimonosono
School of Materials and Chemical Technology, Department of Materials Science and Engineering, Institute of Science Tokyo
Miki Nakahata
School of Materials and Chemical Technology, Department of Materials Science and Engineering, Institute of Science Tokyo
Hiroyuki Ono
Technology and Intellectual Property HQ, TDK Corporation
Wakiko Yamaoka
Technology and Intellectual Property HQ, TDK Corporation
Yukari Inoue
Technology and Intellectual Property HQ, TDK Corporation
Hiroshi Funakubo
School of Materials and Chemical Technology, Department of Materials Science and Engineering, Institute of Science Tokyo

キーワード: Ferroelectric thick film, Non-heating sputtering method, CeO₂–HfO₂ films, Flexible device

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2025 年 133 巻 7 号 p. 308-314

DOI https://doi.org/10.2109/jcersj2.25009

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詳細

抄録

The dependence of ferroelectric properties on composition and film thickness was investigated for CeO₂–HfO₂ films with various ratios x = Ce/(Hf + Ce), deposited on polyethylene terephthalate coated with an amorphous indium tin oxide layer (amorphous ITO/PET) substrates without substrate heating. Additionally, the dependence of composition on piezoelectric properties was examined. X-ray diffraction (XRD) analysis showed that the films consisted of a tetragonal phase (T.) and/or orthorhombic (O.) phases with (111) and {100} out-of-plane orientations for the films with thicknesses ranging from 440 to 910 nm at x = 0.23. In addition, the remnant polarization (P_r) increased from 6.0 to 11.7 µC/cm² with the increase in the film thickness. To investigate the composition dependence, CeO₂–HfO₂ films with a thickness of 800–1000 nm and x values of 0.17, 0.18, 0.23, and 0.28 were prepared. XRD showed (111) and {100} orientations in all films. Clear P-E hysteresis loops and switching currents were observed for x = 0.18 and 0.23, with P_r exceeding 10.0 µC/cm², even in films deposited on amorphous ITO/PET without substrate heating. Moreover, these films exhibited piezoelectric properties consistent with P-E loops, showing their potential for flexible piezoelectric applications.

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